This book is an outcome of the NATO institute on surface modification which was held in
Trevi, 1981. Surface modification and alloying by ion, electron or laser beams is proving to be …

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing
which arises from the excess interstitials generated by the implant. In order to study the …

Small voids are formed in Si by MeV He implantation and annealing. We measure the equilibrium
shape of these voids and hence extract the surface energy curve γ (θ) for Si. γ (111) is …

Measurements during pulsed laser irradiation indicate that amorphous Si melts at a
temperature 200±50 K below the crystalline value. Below energy densities required to melt the …

Thick amorphous Si layers have been prepared by MeV self-ion-implantation and the
thermodynamic and structural properties examined by calorimetry, Raman-spectroscopy, and x-ray…

The effect of impurity coimplantation in MeV erbium‐implanted silicon is studied. A
significant increase in the intensity of the 1.54‐μm Er 3+ emission was observed for different …

Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal
substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV …

We report the first room‐temperature sharp line electroluminescence of an erbium‐doped
silicon light‐emitting diode at λ=1.54 μm. The electroluminescence originates from an internal f…

Thin layers of amorphous silicon (a‐Si) were produced by noble gas ion implantation of (100)
substrates held at 77 K. Rutherford backscattering and channeling, and differential …

The density of amorphous Si has been measured. Multiple Si implants, at energies up to 8.0
MeV, were made through a contact mask to produce alternating amorphous/crystalline Si …