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1981 1
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Page 1
Structural relaxation and defect annihilation in pure amorphous silicon.
Roorda S, Sinke WC, Poate JM, Jacobson DC, Dierker S, Dennis BS, Eaglesham DJ, Spaepen F, Fuoss P. Roorda S, et al. Among authors: jacobson dc. Phys Rev B Condens Matter. 1991 Aug 15;44(8):3702-3725. doi: 10.1103/physrevb.44.3702. Phys Rev B Condens Matter. 1991. PMID: 9999999 No abstract available.
Equilibrium shape of Si.
Eaglesham DJ, White AE, Feldman LC, Moriya N, Jacobson DC. Eaglesham DJ, et al. Among authors: jacobson dc. Phys Rev Lett. 1993 Mar 15;70(11):1643-1646. doi: 10.1103/PhysRevLett.70.1643. Phys Rev Lett. 1993. PMID: 10053347 No abstract available.
Determination of diffusion mechanisms in amorphous silicon.
Coffa S, Poate JM, Jacobson DC, Frank W, Gustin W. Coffa S, et al. Among authors: jacobson dc. Phys Rev B Condens Matter. 1992 Apr 15;45(15):8355-8358. doi: 10.1103/physrevb.45.8355. Phys Rev B Condens Matter. 1992. PMID: 10000669 No abstract available.
Location of atoms in the first monolayer of GaAs on Si.
Patel JR, Freeland PE, Hybertsen MS, Jacobson DC, Golovchenko JA. Patel JR, et al. Among authors: jacobson dc. Phys Rev Lett. 1987 Nov 9;59(19):2180-2183. doi: 10.1103/PhysRevLett.59.2180. Phys Rev Lett. 1987. PMID: 10035445 No abstract available.
Ion-beam-induced destruction of superconducting phase coherence in YBa2Cu3O7- delta.
White AE, Short KT, Jacobson DC, Poate JM, Dynes RC, Mankiewich PM, Skocpol WJ, Howard RE, Anzlowar M, Baldwin KW, Levi AF, Kwo JR, Hsieh T, Hong M. White AE, et al. Among authors: jacobson dc. Phys Rev B Condens Matter. 1988 Mar 1;37(7):3755-3758. doi: 10.1103/physrevb.37.3755. Phys Rev B Condens Matter. 1988. PMID: 9944992 No abstract available.
11 results